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| AP2428GEY Pb Free Plating Product Advanced Power Electronics Corp. Capable of 2.5V gate drive Lower on-resistance Surface mount package RoHS compliant 2928-8 D2 D2 D1 D1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 G1 S1 30V 27m 5.9A ID Description D1 D2 G2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. G1 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 3 3 Rating 30 10 5.9 4.7 30 1.39 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 201031051-1/4 AP2428GEY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=5A VGS=4V, ID=5A VGS=2.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o Min. 30 0.3 - Typ. 14 11 1 4 8 10 24 7 610 210 75 2.2 Max. Units 27 28 36 1 1 10 30 18 980 3.3 V m m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=10V ID=5A VDS=25V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=5V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.1A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/s Min. - Typ. 24 15 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board , t <5sec ; 180/W at steady state. AP2428GEY 30 30 T A =25 C ID , Drain Current (A) o 20 ID , Drain Current (A) 5.0 V 4.5 V 3.5 V 2.5 V T A = 150 C o 5.0 V 4.5 V 3.5 V 2.5 V 20 10 V G = 1.5 V 10 V G = 1.5 V 0 0 2 4 6 0 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 215 1.8 175 ID=3A T A =25 Normalized RDS(ON) 1.4 I D =5A V G =4.5V RDS(ON) (m ) 135 95 1.0 55 15 0 1 2 3 4 5 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 5 4 Normalized VGS(th) (V) 3 T j =150 o C T j =25 o C 1.2 IS(A) 2 0.6 1 0 0 0.2 0.4 0.6 0.8 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2428GEY 12 1000 f=1.0MHz C iss VGS , Gate to Source Voltage (V) ID=5A 9 C (pF) V DS = 15 V V DS = 20 V V DS = 25 V C oss 100 6 C rss 3 0 0 5 10 15 20 25 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 0.2 1ms ID (A) 10ms 1 0.1 0.1 0.05 100ms 0.02 PDM 0.01 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=180 oC/W 0.1 T A =25 o C Single Pulse 1s DC Single Pulse 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =5V VG QG ID , Drain Current (A) 20 T j =25 o C T j =150 o C 4.5V QGS QGD 10 Charge 0 Q 0 1 2 3 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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